55 Search Results

Optical second harmonic generation (SHG) exists as a popular tool for probing materials with broken inversion symmetry in the physical and biological sciences. SHG polarimetry can reveal material anisotropy with high sensitivity, including point group and phase transitions. Here, we probe ferroelectric wurtzite films with a nominal 6 mm symmetry under a normal reflection geometry using SHG microscopy and discover an unexpected symmetry breaking. Symmetry considerations would normally forbid the detection of the SHG signal when light propagates along the polar 6-fold rotation axis. Yet a uniquely anisotropic SHG response is observed in this geometry in Al_1-xB_xN, Al_1-xSc_xN, Zn_1-xMg_xO, and AlN/Al_1-xSc_xNmore » heterostructures grown on silicon that can be modeled by an average monoclinic symmetry of point group m. A significant enhancement of the SHG signal corresponding to up to a 5.3× increase in the SHG intensity (hence ∼2.3 × in effective SHG tensor coefficient) is observed at antiparallel polar domain walls, suggesting local cooperative alignment of symmetry-breaking structural distortions. Namely, it is found that the monoclinic mirror plane is oriented predominantly perpendicular to the walls. Such increases in domain wall SHG thus reveal that subtle symmetry breaking can be a pathway to large property enhancements.« less

This study reports the thickness scaling of sputtered ferroelectric Zn_0.61Mg_0.39O (ZMO) thin films down to 43 nm. Encapsulated IrO₂/ZMO/Ir capacitors exhibited switchable polarizations exceeding 50 μC cm⁻² and coercive fields that increased from 3.9 to 4.4 MV cm⁻¹ as the thickness decreased. Switching kinetics are best described by the simultaneous non-linear nucleation and the growth model. Bimodal switching is prevalent at low thicknesses, with the fastest switching times measured to be approximately 400 ns. Device encapsulation made ZMO switching kinetics more abrupt, potentially due to changes in the concentration of atmosphere-induced defects such as hydroxides. These results demonstrate stable ferroelectricitymore » and sub-microsecond switching in sub-50 nm wurtzite ZMO, highlighting its potential as a low-voltage ferroelectric for integrated nonvolatile memory applications.« less

Of current importance for alloy design is controlling chemical ordering through processing routes to optimize an alloy's mechanical properties for a desired application. However, characterization of chemical ordering remains an ongoing challenge, particularly when nondestructive characterization is needed. In this study, Bragg coherent diffraction imaging is used to reconstruct morphology and lattice displacement in model Cu3Au nanocrystals that have undergone different heat treatments to produce variation in chemical ordering. The magnitudes and distributions of the scattering amplitudes (proportional to electron density) and lattice strains within these crystals are then analyzed to correlate them to the expected amount of chemical orderingmore » present. Nanocrystals with increased amounts of ordering are found to generally have less extreme strains present and reduced strain distribution widths. In addition, statistical correlations are found between the spatial arrangement of scattering amplitude and lattice strains.« less

Wurtzite III-nitride compounds are CMOS-compatible with widespread industrial interest to exercise ferroelectricity, despite their polar structure being highly resistant to polarization reversal. Here, we induce and tune ferroelectric properties in w-AlN via direct-write ion-beam processing, using nanoscale patterned defect engineering as a post-growth alternative to conventional cation substitution. Nanometric piezoresponse spectroscopy of the focused He⁺ beam patterned defect concentrations in ferroelectric Al_0.92B_0.08N measures a localized 10x enhancement in effective piezoresponse and 40% reduction in switching barrier. The irradiation-induced point defects convert piezoelectric AlN into a ferroelectric system with site-saturated nucleation and raise the dielectric susceptibility, switched polarization, and effective piezoelectricmore » coefficient. Enhanced defect-lattice interactions in AlN increase carrier conduction and phonon scattering loss but preserve long-range crystallinity. Here, based on atomistic analysis of nudged elastic band density functional theory calculations and reactive force field simulations, both nitrogen vacancies and defect complexes disrupt bond ordering, facilitating a line-by-line low-barrier switching of pristine AlN.« less

Ferroelectric Al_1−xB_xN thin films are grown on highly doped and plasma treated (100) n-type Si. We demonstrate ferroelectricity for x = < 0.01, 0.02, 0.06, 0.08, 0.13, and 0.17 where the n-type Si is both the substrate and bottom electrode. Polarization hysteresis reveals remanent polarization values between 130 and 140 μC/cm² and coercive field values as low as 4 MV/cm at 1 Hz with low leakage. The highest resistivity and most saturating hysteresis occurs with B contents between x = 0.06 and 0.13. We also demonstrate the impact of substrate plasma treatment time on Al_1−xB_xN crystallinity and switching. Cross-sectional transmissionmore » electron microscopy and electron energy loss spectra reveal an amorphous 3.5 nm SiN_x layer at the Al_1−xB_xN interface post-plasma treatment and deposition. The first ~ 5 nm of Al_1−xB_xN is crystallographically defective. Using the n-type Si substrate, we demonstrate Al_1−xB_xN thickness scaling to 25 nm via low-frequency hysteresis and CV. Serving as the bottom electrode and substrate, the n-type Si enables a streamlined growth process for Al_1−xB_xN for a wide range of Al_1−xB_xN compositions and layer thicknesses.« less

Ferroelectric domain nucleation and growth in epitaxial (Al, B, Sc)N films grown on n-GaN substrates are explored using a combination of ferroelectric property measurements and scanning transmission electron microscopy, including novel in situ switching studies. The films are electrically switched to nitrogen-polar (N-polar) and metal-polar (M-polar) configurations, attaining a remanent polarization of 120 µC cm⁻² with coercive fields of ≈6 MV cm⁻¹. In the initial switching cycle, the ferroelectric domains nucleate near the bottom n-GaN electrode and develop domain walls with zigzag morphologies, while residual “dead layers” that do not switch from the as-deposited orientation persist at the top andmore » bottom electrodes. The in situ microscopy experiments reveal that domain walls propagate fastest in the lateral direction, parallel to the electrode/film interface. These findings provide insights into the domain dynamics and structural evolution of wurtzite ferroelectrics, offering implications for next-generation electronic devices.« less

Wurtzite ferroelectrics (e.g., Al_0.93B_0.07N) are being explored for high-temperature and emerging near-, or in-compute, memory architectures due to the material advantages offered by their large remanent polarization and robust chemical stability. Despite these advantages, current Al0.93B0.07N devices do not have sufficient endurance lifetime to meet roadmap targets. To identify the defects responsible for this limited endurance, a combination of electronic measurements and optical spectroscopies characterized the evolution of defect states within Al_0.93B_0.07N with cycling. Ultrathin (∼10 nm) metal contacts were used to optically probe regions subject to ferroelectric switching; photoluminescence spectroscopy identified the emergence of a transition near 2.1 eVmore » whose intensity scaled with the non-switching polarization quantified via positive-up negative-down (PUND) measurements. Accompanying thermally stimulated depolarization current (TSDC) and modulus spectroscopy measurements also observed the strengthening of a state near 2.1 eV. The origin of this feature is ascribed to transitions between a nitrogen vacancy and another defect deeper in the bandgap. Recognizing that the impurity concentration is largely fixed, strengthening of this transition indicates an increase in the number of nitrogen vacancies. Switching, therefore, creates vacancies in Al_0.93B_0.07N likely due to hot-atom damage induced by the aggressive fields necessary to switch wurtzite materials that ultimately limits endurance.« less

The switching kinetics of RF-magnetron reactively sputtered ~200 nm thick Zn_1-xMg_xO (ZMO) ferroelectric thin films with x = 0.41 and x = 0.27 prepared on Pt/Ti/SiO₂/Si substrates were studied at applied fields near the coercive fields, ranging from 3.4 to 5.1 MV cm^-1, and at temperatures ranging from room temperature to 100 °C. Polarization reversal in ZMO followss the Kolmogorov-Avrami-Ishibashi kinetics model for nucleation and growth at applied fields near the coercive field, and obeys an individual column switching (ICS) model at higher applied fields required to switch most of the spontaneous polarization. Switching in the high-applied field regime canmore » be described using either the Gaussian or inverse gamma distribution functions depending on the mole fraction of magnesium in the film. The switching current transients of the high-Mg content ZMO film (x = 0.41) are always bi-modal, whereas the low Mg composition film (x = 0.27) is described by the Gaussian distribution initially following wake-up, and becomes bimodal with continued cycling. Rayleigh-like behavior of the dielectric constant revealed a simultaneous increase of the irreversible and decrease of the reversible contributions to the dielectric constant, which was ascribed to an increase in the density of mobile domain walls with cycling and resulted in faster switching.« less

This work demonstrates ferroelectric switching in magnetron sputtered Al_1−x−yB_xSc_yN/n-GaN heterostructures. Using high power impulse magnetron sputtering, a silicon doped n-GaN bottom electrode with an electron concentration of 6.0 × 10¹⁹ cm⁻³ is grown on c-plane sapphire. Al_1−x−yB_xSc_yN films are prepared on the GaN surface with Al:B:Sc ratios that produce tensile, lattice matched, or compressive epitaxial strains. X-ray diffraction shows that lattice matched and compressively strained Al_1−x−yB_xSc_yN compositions are pseudomorphic, while partial relaxation is observed for tensilely strained Al_1−x−yB_xSc_yN/n-GaN heterostructures. Electrically, the Al_1−x−yB_xSc_yN/n-GaN stacks show robust hysteresis; the P–E loops are fully saturated with both lattice matched and compressively strained Al_1−x−yB_xSc_yNmore » compositions exhibiting remanent polarization values of 135 μC/cm². For comparison, Al_1−x−yB_xSc_yN films are also prepared on metal organic chemical vapor deposition and single crystal GaN substrates to extend strain and morphology trends to more common substrate types. This report validates that sputter deposition is a feasible technique for fabricating strain-tunable ferroelectric III–N heterostructures with high crystalline fidelity and smooth surface morphologies.« less

Nonlinear optical microscopy such as in the optical second-harmonic generation (SHG) modality has become a popular tool today for probing materials in the physical and biological sciences. While imaging and spectroscopy are widely used in the microscopy mode, nonlinear polarimetry, which can shed light on materials’ symmetry and microstructure, is relatively underdeveloped. This is partly because quantitative analytical modeling of the optical SHG response for anisotropic crystals and films largely assumes low-numerical aperture (NA) focusing of light, where the plane-wave approximation is sufficient. Tight focusing provides unique benefits in revealing out-of-plane polarization responses, which cannot be detected by near-plane-wave illuminationmore » at normal incidence. Here, we outline a method for quantitatively analyzing SHG polarimetry measurements obtained under high-NA focusing within a microscope geometry. Experiments and simulations of a variety of standard samples, from single crystals to thin films, are in good agreement, including measured and simulated spatial SHG maps of ferroelectric domains. A solution to the inverse problem is demonstrated, where the spatial distribution of an SHG tensor with unknown tensor coefficient magnitudes is determined by experimentally measured polarimetry. The ability to extract the out-of-plane component of the nonlinear polarization in normal incidence is demonstrated, which can be valuable for high-resolution polarimetry of 2D materials, thin films, heterostructures, and uniaxial crystals with a strong out-of-plane response.« less